Тип публикации: статья из журнала

Год издания: 2026

Идентификатор DOI: 10.1134/S0021364026600370

Аннотация: Ferromagnetic resonance study of interlayer exchange coupling in Fe₃Si/Ge/Fe₃Si epitaxial trilayer films has been performed. Samples with technological Ge layer thicknesses ${{t}_{{{\text{Ge}}}}}$ of 1 and 4 nm have been obtained by molecular beam epitaxy using deposition from separate thermal sources. The magnitude of the effective interlayer exchange coupling constant ${{J}_{{12}}}$ is equal to 0.7 and –0.18 erg/cm² at ${{t}_{{{\text{Ge}}}}}$ = 1 and 4 nm, respectively. Thus, interlayer exchange coupling in the studied structures is either ferromagnetic (${{t}_{{{\text{Ge}}}}}$ = 1 nm) or antiferromagnetic (${{t}_{{{\text{Ge}}}}}$ = 4 nm), depending on the thickness of the intermediate layer.

Журнал: JETP Letters

Выпуск журнала: Т. 123, № 7

Номера страниц: 483-489

ISSN журнала: 00213640

Место издания: Moscow

Издатель: Pleiades Publishing, Ltd.

• Vazhenina I.G. (Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences)
• Yakovlev I.A. (Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences)
• Varnakov S.N. (Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences)
• Rautskii M.V. (Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences)
• Iskhakov R.S. (Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences)

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