Chemical Group Substitution Enables Highly Efficient Mn4+Luminescence in Heterovalent Systems

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Тип публикации: статья из журнала

Год издания: 2023

Идентификатор DOI: 10.1002/adom.202300076

Аннотация: <jats:title>Abstract</jats:title><jats:p>Defects are a double-edged sword for heterovalent metal-ion doping phosphors. Along with the luminescence tunability of phosphors bestowed by defects, their expected luminescence efficiency would also be inevitably lowered due to the presence of these quenching sites. Herein, a chemical grouПоказать полностьюp substitution strategy is proposed, where inorganic polyhedrons act as the smallest chemical units during the structural evolution of the doping process. Such a method can not only effectively prevent the defect generation for charge compensation in heterovalent doping systems, but also facilitate the incorporation of activators into the matrix, leading to extremely high luminescence efficiency. The concept is first confirmed energetically favorable by first-principles simulations. As a robust experimental proof, two newly reported Mn<jats:sup>4+</jats:sup>-incorporated hexavalent organic-inorganic hybrid oxyfluorides (TMA)<jats:sub>2</jats:sub>BO<jats:sub>2</jats:sub>F<jats:sub>4</jats:sub>:Mn<jats:sup>4+</jats:sup>(where TMA stands for tetramethylammonium, and B = W<jats:sup>6+</jats:sup>or Mo<jats:sup>6+</jats:sup>) present high quantum efficiency (up to 94.4%) and short lifetime (down to 2.26 ms) that are superior to the commercial red phosphor K<jats:sub>2</jats:sub>SiF<jats:sub>6</jats:sub>:Mn<jats:sup>4+</jats:sup>(≈84.8%, ≈8.06 ms). Utilizing the differences in decay lifetimes and thermal quenching behaviors of (TMA)<jats:sub>2</jats:sub>BO<jats:sub>2</jats:sub>F<jats:sub>4</jats:sub>:Mn<jats:sup>4+</jats:sup>and K<jats:sub>2</jats:sub>SiF<jats:sub>6</jats:sub>:Mn<jats:sup>4+</jats:sup>, a time- and temperature-resolved single-color multiplexing mode with high-safety and easy-access is developed for information security. This work offers an effective strategy to manipulate defect generation in luminescent materials.</jats:p>

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Издание

Журнал: Advanced Optical Materials

Выпуск журнала: Т. 11, 10

ISSN журнала: 21951071

Персоны

  • Ming Hong (State Key Laboratory of Luminescent Materials and Devices Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, and Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices South China University of Technology Guangzhou 510641 P. R. China)
  • Zhao Yifei (State Key Laboratory of Luminescent Materials and Devices Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, and Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices South China University of Technology Guangzhou 510641 P. R. China)
  • Zhou Yayun (State Key Laboratory of Luminescent Materials and Devices Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, and Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices South China University of Technology Guangzhou 510641 P. R. China)
  • Molokeev Maxim S. (Department of Physics Far Eastern State Transport University Khabarovsk 680021 Russia)
  • Wang Yuanjing (State Key Laboratory of Luminescent Materials and Devices Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, and Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices South China University of Technology Guangzhou 510641 P. R. China)
  • Song Enhai (State Key Laboratory of Luminescent Materials and Devices Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, and Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices South China University of Technology Guangzhou 510641 P. R. China)
  • Zhang Qinyuan (School of Physics and Optoelectronics South China University of Technology Guangzhou 510641 P. R. China)

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